Central Semiconductor Corp. Bipolar Transistors - BJT 2N2906

The 2N2906 is a PNP silicon epitaxial planar transistor designed for small signal and general purpose switching applications. It is packaged in a TO-18 case with a maximum collector-base voltage of 60 V, collector-emitter voltage of 40 V, and emitter-base voltage of 5.0 V. The continuous collector current is 600 mA, and the power dissipation is 400 mW at 25°C ambient temperature. The device has a junction temperature range of -65°C to +200°C, a thermal resistance of 438°C/W from junction to ambient, and a transition frequency of 200 MHz at 100 MHz. Current gain (hFE) ranges from 20 to 75 depending on collector current. The saturation voltage is 0.4 V at 150 mA collector current and 1.6 V at 500 mA.