Central Semiconductor Corp. Bipolar Transistors - BJT 2N2905

The 2N2905 is a PNP silicon transistor in a TO-39 package, designed for small signal, general purpose, and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 0.6 A, with a power dissipation of 0.8 W at 25°C junction temperature. The maximum junction and storage temperature range is -65°C to +200°C. Current gain (hFE) ranges from 20 to 30 at IC=500mA and VCE=10V. Collector-emitter saturation voltage is 1.6 V at IC=500mA and IB=50mA. The transition frequency is 200 MHz at IC=50mA and VCE=20V. Output capacitance is 8.0 pF at VCB=10V and f=100kHz. Turn-on time is 45 ns and turn-off time is 180 ns under specified test conditions.