Central Semiconductor Corp. Bipolar Transistors - BJT 2N2904

Description
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
Description
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W
Datasheet
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The 2N2904 is a PNP silicon transistor designed for small signal, general purpose, and switching applications. It is packaged in a TO-39 case and has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, an emitter-base voltage of 5.0 V, a continuous collector current of 0.6 A, and a power dissipation of 0.8 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C. Its current gain (hFE) ranges from 20 to 120 at VCE=10 V and IC=150 mA, with a transition frequency of 200 MHz.

Datasheet Summary
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The 2N2904 is a PNP silicon transistor designed for small signal, general purpose, and switching applications. It is packaged in a TO-39 case and has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 40 V, an emitter-base voltage of 5.0 V, a continuous collector current of 0.6 A, and a power dissipation of 0.8 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C. Its current gain (hFE) ranges from 20 to 120 at VCE=10 V and IC=150 mA, with a transition frequency of 200 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2904
Bipolar Transistors - BJT 2N2904
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W

Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2904
Product Name Bipolar Transistors - BJT
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