Central Semiconductor Corp. Bipolar Transistors - BJT 2N2857

The 2N2857 is an NPN silicon RF transistor designed for VHF/UHF amplifier, oscillator, and converter applications in a TO-72 case. It has a collector-base voltage rating of 30 V, a collector-emitter voltage of 15 V, and a continuous collector current of 40 mA. Power dissipation is 200 mW at 25°C ambient temperature. The transistor has a current gain (hFE) range of 30 to 150 at VCE=1.0 V and IC=3.0 mA, with a transition frequency (fT) of 1.0 to 1.9 GHz at VCE=6.0 V and IC=5.0 mA. The output power at 500 MHz is 30 mW, and the noise figure is 3.9 to 4.5 dB at 450 MHz. Operating and storage junction temperatures range from -65°C to +200°C.