Central Semiconductor Corp. Bipolar RF Transistors 2N2857 TIN/LEAD

The 2N2857 is an NPN silicon RF transistor designed for VHF/UHF amplifier, oscillator, and converter applications in a TO-72 case. It has a collector-base voltage rating of 30 V, a collector-emitter voltage of 15 V, a continuous collector current of 40 mA, and a power dissipation of 200 mW at 25°C. The transistor offers a transition frequency of 1.0 to 1.9 GHz, a current gain (hFE) of 30 to 150 at 3 mA collector current, and a collector output capacitance of 1.0 pF. The operating and storage junction temperature range is -65°C to +200°C.