Central Semiconductor Corp. JFETs 2N2608

The 2N2608 is a silicon P-channel JFET for low-level amplifier applications, housed in a TO-18 package. It has a maximum drain-source voltage of 30 V, a maximum power dissipation of 300 mW at 25°C, and a gate-source voltage rating of 30 V. The device exhibits a drain-source saturation current (IDSS) between 0.9 and 4.5 mA at VDS=5 V and VGS=0, with a gate-source cutoff voltage (VGS(OFF)) ranging from 1.0 to 4.0 V. The forward transconductance |yfs| is 1000 µS at VDS=5 V and f=1.0 kHz, and the input capacitance (Ciss) is 17 pF at VGS=1 V and VDS=5 V. The operating and storage junction temperature range is -65 to +200 °C.