NPN silicon transistor for low-noise applications with a collector-emitter voltage of 60 V, collector-base voltage of 60 V, emitter-base voltage of 6.0 V, and a collector current of 5.0 mA at a collector-emitter saturation voltage of 0.35 V. It has a current gain (hFE) range of 120 to 500 at 0.01 mA and 5.0 V, a transition frequency of 60 MHz, a noise figure of 4.0 dB, and an output capacitance of 6.0 pF. Housed in a TO-18 metal case.
Bipolar Transistors - BJT NPN Gen Pur SS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2483 |
| Product Name | Bipolar Transistors - BJT |
