Central Semiconductor Corp. Bipolar Transistor Arrays 2N2453A

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 50mA 60MHz 600mW Through Hole TO-78-6
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Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 50mA 60MHz 600mW Through Hole TO-78-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - 2N2453A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
2N2453A-ND
Bipolar Transistor Arrays 2N2453A-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 50mA 60MHz 600mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 50mA 60MHz 600mW Through Hole TO-78-6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - 2N2453A - 1123660-2N2453A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - 2N2453A
1123660-2N2453A
TRANSISTORS - Transistors (BJT) - Arrays - 2N2453A 1123660-2N2453A
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1123660-2N2453A Packaging: Bulk Mounting Style: Through Hole Transistor Type: 2 NPN (Dual) Frequency - Transition: 60MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-78-6 Status: Obsolete Manufacturer Homepage: www.centralsemi.com Manufacturer Package: TO-78-6 Metal Can Current - Collector (Ic) (Maximum): 50mA Voltage - Collector Emitter Breakdown (Maximum): 50V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) DC Current Gain (hFE) (Minimum) at Ic, Vce: 150 at 1mA, 5V Maximum Power: 600mW

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1123660-2N2453A
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: 2 NPN (Dual)
Frequency - Transition: 60MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-78-6
Status: Obsolete
Manufacturer Homepage: www.centralsemi.com
Manufacturer Package: TO-78-6 Metal Can
Current - Collector (Ic) (Maximum): 50mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
DC Current Gain (hFE) (Minimum) at Ic, Vce: 150 at 1mA, 5V
Maximum Power: 600mW

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N2453A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N2453A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N2453A
TRANS 2NPN 50MA 50V TO78-6

TRANS 2NPN 50MA 50V TO78-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number 2N2453A-ND 1123660-2N2453A 2N2453A
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - 2N2453A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-78-6 Metal Can SOT3
Packing Method Bulk; Bulk Bulk; Bulk
Power Gain 150 dB
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