Central Semiconductor Corp. Bipolar Transistors - BJT 2N2405

The 2N2405 is an NPN bipolar junction transistor designed for amplification and switching applications in a TO-39 package. It has a collector-base voltage rating of 120 V, a collector-emitter voltage of 90 V, and a maximum collector current of 150 mA. The device exhibits a DC current gain (hFE) of 200 at a collector current of 150 mA and a collector-emitter voltage of 10 V, with a collector-emitter saturation voltage of 0.50 V under those conditions. It offers a transition frequency of 150 MHz and a collector-base capacitance of 50 pF. The part meets RoHS compliance and is suitable for general-purpose electronic circuits requiring high voltage and moderate frequency performance.