Central Semiconductor Corp. TRANSISTORS - Transistors (BJT) - Single - 2N2270 2N2270

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 762194-2N2270 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: NPN Frequency - Transition: 100MHz Family Name: 2N2270 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 900mV @ 15mA, 150mA Current - Collector Cutoff (Maximum): 50nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 150mA, 10V Alternative Parts (Cross-Reference): BC140-10; BSX45-16; BSX45-10; ; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 762194-2N2270 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: NPN Frequency - Transition: 100MHz Family Name: 2N2270 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 900mV @ 15mA, 150mA Current - Collector Cutoff (Maximum): 50nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 150mA, 10V Alternative Parts (Cross-Reference): BC140-10; BSX45-16; BSX45-10; ; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N2270 - 762194-2N2270 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N2270
762194-2N2270
TRANSISTORS - Transistors (BJT) - Single - 2N2270 762194-2N2270
Manufacturer: Central Semiconductor Corp Win Source Part Number: 762194-2N2270 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-205AD, TO-39-3 Metal Can Power - Max: 1W Transistor Type: NPN Frequency - Transition: 100MHz Family Name: 2N2270 Categories: Discrete Semiconductor Products Manufacturer Package: TO-39 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 45V Vce Saturation (Maximum) @ Ib, Ic: 900mV @ 15mA, 150mA Current - Collector Cutoff (Maximum): 50nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 150mA, 10V Alternative Parts (Cross-Reference): BC140-10; BSX45-16; BSX45-10; ; Introduction Date: December 22, 2004 ECCN: EAR99 Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 762194-2N2270
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-205AD, TO-39-3 Metal Can
Power - Max: 1W
Transistor Type: NPN
Frequency - Transition: 100MHz
Family Name: 2N2270
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-39
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 45V
Vce Saturation (Maximum) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Maximum): 50nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 50 @ 150mA, 10V
Alternative Parts (Cross-Reference): BC140-10; BSX45-16; BSX45-10; ;
Introduction Date: December 22, 2004
ECCN: EAR99
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistor - 42010326 - Radwell International
Willingboro, NJ, United States
Transistor
42010326
Transistor 42010326
TRANS NPN 45V 1A TO-39. FREE 2 YEAR RADWELL WARRANTY

TRANS NPN 45V 1A TO-39. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2270
Bipolar Transistors - BJT 2N2270
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Technical Specifications

  Win Source Electronics Radwell International VAST STOCK CO., LIMITED
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number 762194-2N2270 42010326 2N2270
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N2270 Transistor Bipolar Transistors - BJT
Polarity NPN
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