Central Semiconductor Corp. TRANSISTORS - Transistors (BJT) - Single - 2N2221 2N2221

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003832-2N2221 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 1.2W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Signal Processing
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003832-2N2221 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 1.2W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Signal Processing
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TRANSISTORS - Transistors (BJT) - Single - 2N2221 - 1003832-2N2221 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N2221
1003832-2N2221
TRANSISTORS - Transistors (BJT) - Single - 2N2221 1003832-2N2221
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1003832-2N2221 Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-18 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 1.6V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 1.2W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Signal Processing

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1003832-2N2221
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-18
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 10V
Maximum Power Dissipation: 1.2W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Signal Processing

Buy Now Datasheet
Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Bipolar RF Transistors
Product Number 1003832-2N2221 2N2221
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N2221 Bipolar Transistors - BJT
Polarity NPN; NPN
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