Central Semiconductor Corp. TRANSISTORS - Transistors (BJT) - Single - 2N2218A 2N2218A

Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 117891-2N2218A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Central Semiconductor Corp Win Source Part Number: 117891-2N2218A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N2218A - 117891-2N2218A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N2218A
117891-2N2218A
TRANSISTORS - Transistors (BJT) - Single - 2N2218A 117891-2N2218A
Manufacturer: Central Semiconductor Corp Win Source Part Number: 117891-2N2218A Packaging: Bulk Mounting: Through Hole Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 200°C (TJ) Case / Package: TO-39 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 1V @ 50mA, 500mA Collector Cut-off Current(Max): 10nA (ICBO) Typical Gain (hFE) (Min): 40 @ 150mA, 10V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 117891-2N2218A
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 250MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 200°C (TJ)
Case / Package: TO-39
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1V @ 50mA, 500mA
Collector Cut-off Current(Max): 10nA (ICBO)
Typical Gain (hFE) (Min): 40 @ 150mA, 10V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 40229670 - Radwell International
Willingboro, NJ, United States
Transistor
40229670
Transistor 40229670
TRANSISTOR, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2218A
Bipolar Transistors - BJT 2N2218A
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

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Technical Specifications

  Win Source Electronics Radwell International VAST STOCK CO., LIMITED
Product Category Transistors RF Transistors Bipolar RF Transistors
Product Number 117891-2N2218A 40229670 2N2218A
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N2218A Transistor Bipolar Transistors - BJT
Polarity NPN; NPN
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