Central Semiconductor Corp. Bipolar Transistors - BJT 2N2195B

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Bipolar Transistors - BJT NPN 45Vcbo 25Vceo 5.0Vebo 150mA 20pF
Description
Bipolar Transistors - BJT NPN 45Vcbo 25Vceo 5.0Vebo 150mA 20pF
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NPN silicon bipolar transistor in TO-39 case for amplification and switching applications, with a collector-base voltage of 45 V, collector-emitter voltage of 25 V, emitter-base voltage of 5.0 V, and continuous collector current of 150 mA. It has a typical current gain of 120 at 150 mA collector current and 10 V collector-emitter voltage, a collector-emitter saturation voltage of 0.18 V at 150 mA, and a transition frequency of 150 MHz. The collector-base capacitance is 150 pF.

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NPN silicon bipolar transistor in TO-39 case for amplification and switching applications, with a collector-base voltage of 45 V, collector-emitter voltage of 25 V, emitter-base voltage of 5.0 V, and continuous collector current of 150 mA. It has a typical current gain of 120 at 150 mA collector current and 10 V collector-emitter voltage, a collector-emitter saturation voltage of 0.18 V at 150 mA, and a transition frequency of 150 MHz. The collector-base capacitance is 150 pF.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2195B
Bipolar Transistors - BJT 2N2195B
Bipolar Transistors - BJT NPN 45Vcbo 25Vceo 5.0Vebo 150mA 20pF

Bipolar Transistors - BJT NPN 45Vcbo 25Vceo 5.0Vebo 150mA 20pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2195B
Product Name Bipolar Transistors - BJT
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