The 2N2102 series is a silicon NPN bipolar junction transistor designed for high-current general purpose switching applications, housed in a TO-39 package. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W. The transistor offers a current gain (hFE) ranging from 10 to 200 depending on collector current, with a transition frequency of 60 MHz. The device supports an operating and storage junction temperature range from -65°C to +200°C and meets RoHS compliance when ordered with the PBFREE suffix.
Bipolar (BJT) Transistor NPN 65V 1A 60MHz 1W Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N2102PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |