Central Semiconductor Corp. Bipolar Transistors - BJT 2N1893

The 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications in a TO-39 case. It has a collector-base voltage rating of 120 V, collector-emitter voltage of 80 V, and continuous collector current of 500 mA. Power dissipation is 0.8 W at ambient temperature and 3.0 W at case temperature 25°C. The operating and storage junction temperature range is -65 to +200°C. Current gain (hFE) ranges from 20 to 120 depending on collector current. Transition frequency is 50 MHz at IC=50 mA. Collector-emitter saturation voltage is 1.2 V at IC=50 mA and 5.0 V at IC=150 mA. Base-emitter saturation voltage is 0.9 V at IC=50 mA and 1.3 V at IC=150 mA. Output capacitance is 15 pF and input capacitance is 85 pF at specified conditions.