Central Semiconductor Corp. Bipolar Transistors - BJT 2N1700

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Bipolar Transistors - BJT NPN SS Power
Description
Bipolar Transistors - BJT NPN SS Power
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2N1700 is an NPN bipolar junction transistor for amplification and switching applications in a TO-39 case. It has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and a maximum collector current of 20 mA. The DC current gain (hFE) is a minimum of 80 at a collector current of 20 mA and a collector-emitter voltage of 1 V. The collector-emitter saturation voltage is 1.00 V at a collector current of 10 mA. The transition frequency is 100 MHz, and the collector-base capacitance is 30 pF.

Datasheet Summary
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2N1700 is an NPN bipolar junction transistor for amplification and switching applications in a TO-39 case. It has a collector-emitter voltage rating of 40 V, a collector-base voltage rating of 60 V, and a maximum collector current of 20 mA. The DC current gain (hFE) is a minimum of 80 at a collector current of 20 mA and a collector-emitter voltage of 1 V. The collector-emitter saturation voltage is 1.00 V at a collector current of 10 mA. The transition frequency is 100 MHz, and the collector-base capacitance is 30 pF.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N1700
Bipolar Transistors - BJT 2N1700
Bipolar Transistors - BJT NPN SS Power

Bipolar Transistors - BJT NPN SS Power

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N1700
Product Name Bipolar Transistors - BJT
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