Central Semiconductor Corp. Bipolar Transistors - BJT 2N1131A

Description
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF
Description
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF
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PNP bipolar transistor for amplification and switching, housed in a TO-39 case, with a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 5.0 V, continuous collector current of 150 mA, current gain (hFE) ranging from 45 to 150 at 10 mA collector current and 10 V collector-emitter voltage, collector-emitter saturation voltage of 1.50 V at 10 mA, transition frequency of 150 MHz, and output capacitance of 150 pF.

Datasheet Summary
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PNP bipolar transistor for amplification and switching, housed in a TO-39 case, with a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 5.0 V, continuous collector current of 150 mA, current gain (hFE) ranging from 45 to 150 at 10 mA collector current and 10 V collector-emitter voltage, collector-emitter saturation voltage of 1.50 V at 10 mA, transition frequency of 150 MHz, and output capacitance of 150 pF.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N1131A
Bipolar Transistors - BJT 2N1131A
Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF

Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N1131A
Product Name Bipolar Transistors - BJT
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