BYTe Semiconductor Memory BY25Q128ESWIG(R)

Description
128 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet
Description
128 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25Q128ESWIG(R)DKR-ND - DigiKey
Thief River Falls, MN, United States
128 MBIT, 3.0V (2.7V TO 3.6V), -

128 MBIT, 3.0V (2.7V TO 3.6V), -

Buy Now Datasheet
Memory - 5369-BY25Q128ESWIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
IC FLASH 128MBIT SPI/QUAD 8WSON

IC FLASH 128MBIT SPI/QUAD 8WSON

Buy Now Datasheet
Memory - 5369-BY25Q128ESWIG(R)CT-ND - DigiKey
Thief River Falls, MN, United States
128 MBIT, 3.0V (2.7V TO 3.6V), -

128 MBIT, 3.0V (2.7V TO 3.6V), -

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25Q128ESWIG(R)DKR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL128S-10DHV020 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 128000 kbits
View Details
2 suppliers
Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - CAT28F001H-12T - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 120 ns
Density 1000 kbits
View Details
Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details