BYTe Semiconductor Memory BY25Q128ESFIG(T)

Description
131 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet
Description
131 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25Q128ESFIG(T)-ND - DigiKey
Thief River Falls, MN, United States
131 MBIT, 3.0V (2.7V TO 3.6V), -

131 MBIT, 3.0V (2.7V TO 3.6V), -

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25Q128ESFIG(T)-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 9021982 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 5962-9459901MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
Memory - AS8F128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 736-DP8419V-70 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers