BYTe Semiconductor Memory BY25FQ64ESSIG(R)

Description
64 MBIT, 3.0V (2.7V TO 3.6V), -4
Request a Quote Datasheet
Description
64 MBIT, 3.0V (2.7V TO 3.6V), -4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25FQ64ESSIG(R)CT-ND - DigiKey
Thief River Falls, MN, United States
64 MBIT, 3.0V (2.7V TO 3.6V), -4

64 MBIT, 3.0V (2.7V TO 3.6V), -4

Buy Now Datasheet
Memory - 5369-BY25FQ64ESSIG(R)DKR-ND - DigiKey
Thief River Falls, MN, United States
64 MBIT, 3.0V (2.7V TO 3.6V), -4

64 MBIT, 3.0V (2.7V TO 3.6V), -4

Buy Now Datasheet
Memory - 5369-BY25FQ64ESSIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
64 MBIT, 3.0V (2.7V TO 3.6V), -4

64 MBIT, 3.0V (2.7V TO 3.6V), -4

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25FQ64ESSIG(R)CT-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 16-4099-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882525 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details