BYTe Semiconductor Memory BY25FQ256ESWIG(R)

Description
256 MBIT, 3.0V (2.7V TO 3.6V), 1
Request a Quote Datasheet
Description
256 MBIT, 3.0V (2.7V TO 3.6V), 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25FQ256ESWIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
256 MBIT, 3.0V (2.7V TO 3.6V), 1

256 MBIT, 3.0V (2.7V TO 3.6V), 1

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25FQ256ESWIG(R)TR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C2568C-25/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
Memory - 27S185DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
Quad Memory IC and Storage Component - 774-S25FL116K0XMFB013 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Cycle Time 3.00E6 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
4 suppliers