BYTe Semiconductor Memory BY25FQ16ESSIG(R)

Description
16 MBIT, 3.0V (2.7V TO 3.6V), -4
Request a Quote Datasheet
Description
16 MBIT, 3.0V (2.7V TO 3.6V), -4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25FQ16ESSIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
16 MBIT, 3.0V (2.7V TO 3.6V), -4

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25FQ16ESSIG(R)TR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116SA15SOG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 16 kbits
View Details
Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details
Flash Memory - 1882521 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details