BYTe Semiconductor Memory BY25FQ16ESSIG(R)

Description
16 MBIT, 3.0V (2.7V TO 3.6V), -4
  • Memory - 5369-BY25FQ16ESSIG(R)TR-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
16 MBIT, 3.0V (2.7V TO 3.6V), -4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25FQ16ESSIG(R)TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
5369-BY25FQ16ESSIG(R)TR-ND
Memory 5369-BY25FQ16ESSIG(R)TR-ND
16 MBIT, 3.0V (2.7V TO 3.6V), -4

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25FQ16ESSIG(R)TR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Memory
71024S12Y
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Controllers - DP8422VX-33 - Quarktwin Technology Ltd.
Texas Instruments
Controllers
DP8422VX-33
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
Memory - QMP9GL01GP12TFI010 - Lingto Electronic Limited
Infineon Technologies AG
Memory
QMP9GL01GP12TFI010
Specs
Memory Category Flash; Flash
Density 1000000 kbits
View Details
2 suppliers
Memory - MYX4DD3K512M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DD3K512M72PBG2
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details