Bruckewell Technology Co., Ltd. Single FETs, MOSFETs MSHM30N46

Description
N-Channel MOSFET,30V,46A,DFN3x 3
Description
N-Channel MOSFET,30V,46A,DFN3x 3
Datasheet
Datasheet Summary
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N-Channel 30-V MOSFET in a PDFN 3.3×3.3 mm package, rated for 46 A continuous drain current at 25°C, with a maximum on-resistance of 9 mΩ at 10 V gate-source voltage and 15 mΩ at 4.5 V. Features 100% avalanche energy testing up to 57.8 mJ and a gate charge of 12.8 nC. Complies with RoHS requirements and operates from -55°C to 150°C junction temperature.

Datasheet Summary
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N-Channel 30-V MOSFET in a PDFN 3.3×3.3 mm package, rated for 46 A continuous drain current at 25°C, with a maximum on-resistance of 9 mΩ at 10 V gate-source voltage and 15 mΩ at 4.5 V. Features 100% avalanche energy testing up to 57.8 mJ and a gate charge of 12.8 nC. Complies with RoHS requirements and operates from -55°C to 150°C junction temperature.

Suppliers

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Product
Description
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Single FETs, MOSFETs - MSHM30N46 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MSHM30N46
Single FETs, MOSFETs MSHM30N46
N-Channel MOSFET,30V,46A,DFN3x 3

N-Channel MOSFET,30V,46A,DFN3x3

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSHM30N46
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
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