RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3 Product overview: VMMK-1218-TR1G from Broadcom is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-VMMK-1218-TR1G can be used for catalog matching and distributor lookup.
RF MOSFET E-PHEMT 3V 0402
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | RF Transistors |
| Product Number | 285-VMMK-1218-TR1G | VMMK-1218-TR1G | VMMK-1218-TR1G |
| Product Name | N-Channel MOSFET Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 300 milliwatts | ||
| Transistor Technology / Material | E-pHEMT | ||
| Power Gain | 9 dB | ||
| Noise Figure | 0.8100 dB |
