Manufacturer: Broadcom Limited
Win Source Part Number: 010386-ATF-58143-TR1
Packaging: Reel - TR
Voltage Rating: 5V
Current Rating: 100mA
Frequency: 2GHz
Current - Test: 30mA
Gain: 16.5dB
Transistor Polarity: pHEMT FET
Voltage - Test: 3V
Noise Figure: 0.5dB
Power - Output: 19dBm
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-343
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
GaAs RF FET Transistor, 2GHz, 5V, 100mA, 0.5dB NF, SOT-343 Product overview: ATF-58143-TR1G from Broadcom is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2GHz, 5V, 100mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2GHz, 5V, 100mA, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ATF-58143-TR1G can be used for catalog matching and distributor lookup.
RF MOSFET PHEMT FET 3V SOT343
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 010386-ATF-58143-TR1G | ATF-58143-TR1G | 285-ATF-58143-TR1G | ATF-58143-TR1G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATF-58143-TR1G | RF FETs, MOSFETs | 2GHz 5V 100mA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | pHEMT FET | |||
| Package Type | SOT3; SOT-343 | SC-82A, SOT-343 | SC-82A, SOT-343 | |
| Transistor Technology / Material | pHEMT FET | |||
| Power Gain | 16.5 dB | |||
| Noise Figure | 0.5000 dB |