Manufacturer: Broadcom Limited
Win Source Part Number: 010381-ATF-54143-BLK
Packaging: Cut Strip
Voltage Rating: 5V
Current Rating: 120mA
Frequency: 2GHz
Current - Test: 60mA
Gain: 16.6dB
Transistor Polarity: pHEMT FET
Voltage - Test: 3V
Noise Figure: 0.5dB
Power - Output: 20.4dBm
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-343
Alternative Parts (Cross-Reference): ATF-54143-TR1G; ATF-54143-TR2G;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 100
GaAs RF FET, C Band, 2GHz, 16.6dB, 0.5dB NF, SOT-343 Product overview: ATF-54143-BLKG from Broadcom is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2GHz. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2GHz, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ATF-54143-BLKG can be used for catalog matching and distributor lookup.
RF MOSFET PHEMT FET 3V SOT343
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | RF Transistors |
| Product Number | 010381-ATF-54143-BLKG | 285-ATF-54143-BLKG | ATF-54143-BLKG | ATF-54143-BLKG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATF-54143-BLKG | 2GHz MOSFET Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | pHEMT FET | N-Channel | ||
| Package Type | SOT3; SOT-343 | SC-82A, SOT-343 | SC-82A, SOT-343 | |
| PD | 725 milliwatts | |||
| TJ | -65 C (-85 F) | |||
| Transistor Technology / Material | pHEMT FET |