FET RF 7V 2GHZ 8-LPCC
RF Mosfet E-pHEMT 4V 135mA 2GHz 20dB 24.5dBm 8-LPCC (2x2)
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 Product overview: ATF-531P8-TR1 from Broadcom is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-ATF-531P8-TR1 can be used for catalog matching and distributor lookup.
RF MOSFET E-PHEMT 4V 8LPCC
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ATF-531P8-TR1 | 516-2239-2-ND | 285-ATF-531P8-TR1 | ATF-531P8-TR1 |
| Product Name | RF FETs, MOSFETs | RF FETs, MOSFETs | N-Channel MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | E-pHEMT | |||
| Power Gain | 20 dB | |||
| Noise Figure | 0.6000 dB | |||
| Operating Frequency | 2000 MHz |
