Bourns, Inc. Bipolar Transistors - BJT TIPP32B-S

NPN silicon power transistors with a 2 A continuous collector current, 4 A peak collector current, and a collector-emitter voltage rating of 80 V for the TIPP31B variant. The device is packaged in a case style with a maximum power dissipation of 0.8 W at 25°C case temperature and 20 W under pulsed conditions. Operating junction and storage temperatures range from -55°C to +150°C. The part is not explicitly listed, but shares the series characteristics of the TIPP31 family with voltage ratings defined by suffix letters.