NPN silicon power transistor with a 60 V collector-emitter voltage, 2 A continuous collector current, and 4 A peak collector current. It handles 20 W pulsed power dissipation and has a maximum continuous device dissipation of 0.8 W at 25°C case temperature. The base-emitter voltage is 5 V, and the collector-emitter saturation voltage is 1 V at a collector current of 2 A and base current of 375 mA. Operating junction and storage temperatures range from -55°C to +150°C. Packaged in an LP package.
Bipolar Transistors - BJT 60V 2A NPN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | TIPP31A-S |
| Product Name | Bipolar Transistors - BJT |
