NPN silicon power transistor in a LP package with a continuous collector current of 2 A, peak collector current of 4 A, collector-emitter voltage of 40 V, and pulsed power dissipation of 20 W. Operating junction and storage temperature range is -55 to +150 °C. Lead temperature is 260 °C for 10 seconds at 3.2 mm from case. Continuous device dissipation is 0.8 W at 25 °C case temperature, derating linearly at 6.4 mW/°C to 150 °C.
Bipolar Transistors - BJT 40V 2A NPN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | TIPP31-S |
| Product Name | Bipolar Transistors - BJT |
