NPN silicon power transistor designed for high-frequency electronic ballasts up to 50 W, housed in a TO-220 package. It has a collector-emitter voltage rating of 700 V, continuous collector current of 2.5 A, and peak collector current of 8 A for 300 µs pulses. The forward current transfer ratio (hFE) ranges from 7 to 21 at VCE = 1 V and IC = 800 mA. Collector-emitter saturation voltage is 0.22 V at 90°C with IC = 800 mA and IB = 160 mA. Junction-to-case thermal resistance is 2.5°C/W. Operating junction temperature range is -65°C to +150°C. Pin 2 is electrically connected to the mounting base.
Bipolar Transistors - BJT NPN LIGHTING TRX 700V 8A
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BUL770-S |
| Product Name | Bipolar Transistors - BJT |
