Bourns, Inc. Single Bipolar Transistors BU426A-S

Description
Bipolar (BJT) Transistor NPN 400V 6A 70W Through Hole SOT-93
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 6A 70W Through Hole SOT-93
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - BU426A-S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BU426A-S-ND
Single Bipolar Transistors BU426A-S-ND
Bipolar (BJT) Transistor NPN 400V 6A 70W Through Hole SOT-93

Bipolar (BJT) Transistor NPN 400V 6A 70W Through Hole SOT-93

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BU426A-S - 770618-BU426A-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BU426A-S
770618-BU426A-S
TRANSISTORS - Transistors (BJT) - Single - BU426A-S 770618-BU426A-S
Manufacturer: Bourns Inc. Win Source Part Number: 770618-BU426A-S Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-218-3 Power - Max: 70W Transistor Type: NPN Part Status: Obsolete(EOL) Family Name: BU426A Categories: Discrete Semiconductor Products Manufacturer Package: SOT-93 Current - Collector (Ic) (Maximum): 6A Voltage - Collector Emitter Breakdown (Maximum): 400V Vce Saturation (Maximum) @ Ib, Ic: 3V @ 1.25A, 4A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 600mA, 5V Alternative Parts (Cross-Reference): 2SC2555(YODEN); 2SC2555(SONY4); 2SC2555(NEMIC-1BS); 2SC2555(P.BS); Introduction Date: May 23, 1993 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 770618-BU426A-S
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-218-3
Power - Max: 70W
Transistor Type: NPN
Part Status: Obsolete(EOL)
Family Name: BU426A
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-93
Current - Collector (Ic) (Maximum): 6A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Vce Saturation (Maximum) @ Ib, Ic: 3V @ 1.25A, 4A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 600mA, 5V
Alternative Parts (Cross-Reference): 2SC2555(YODEN); 2SC2555(SONY4); 2SC2555(NEMIC-1BS); 2SC2555(P.BS);
Introduction Date: May 23, 1993
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BU426A-S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BU426A-S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BU426A-S
TRANS NPN 400V 6A SOT93

TRANS NPN 400V 6A SOT93

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BU426A-S-ND 770618-BU426A-S BU426A-S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BU426A-S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-218-3 SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1 milliamps 6000 milliamps
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