Bourns, Inc. Single Bipolar Transistors BDW83B-S

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 15A 3.5W Through Hole SOT-93
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 15A 3.5W Through Hole SOT-93
Request a Quote Datasheet

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Single Bipolar Transistors - BDW83B-S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BDW83B-S-ND
Single Bipolar Transistors BDW83B-S-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 15A 3.5W Through Hole SOT-93

Bipolar (BJT) Transistor NPN - Darlington 80V 15A 3.5W Through Hole SOT-93

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BDW83B-S - 769947-BDW83B-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BDW83B-S
769947-BDW83B-S
TRANSISTORS - Transistors (BJT) - Single - BDW83B-S 769947-BDW83B-S
Manufacturer: Bourns Inc. Win Source Part Number: 769947-BDW83B-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-218-3 Power - Max: 3.5W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: BDW83B Categories: Discrete Semiconductor Products Manufacturer Package: SOT-93 Current - Collector (Ic) (Maximum): 15A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 4V @ 150mA, 15A Current - Collector Cutoff (Maximum): 1mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 6A, 3V Alternative Parts (Cross-Reference): TIP141; BDV65A; Introduction Date: May 23, 1993 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 769947-BDW83B-S
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-218-3
Power - Max: 3.5W
Transistor Type: NPN - Darlington
Part Status: Obsolete(EOL)
Family Name: BDW83B
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-93
Current - Collector (Ic) (Maximum): 15A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Maximum): 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 6A, 3V
Alternative Parts (Cross-Reference): TIP141; BDV65A;
Introduction Date: May 23, 1993
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BDW83B-S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BDW83B-S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BDW83B-S
TRANS NPN DARL 80V 15A SOT93

TRANS NPN DARL 80V 15A SOT93

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number BDW83B-S-ND 769947-BDW83B-S BDW83B-S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BDW83B-S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-218-3 SOT3
IC(max) 1 milliamps 15000 milliamps
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