Bourns, Inc. Single Bipolar Transistors BDW53C-S

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 2W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 2W Through Hole TO-220
Request a Quote Datasheet

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Single Bipolar Transistors - BDW53C-S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BDW53C-S-ND
Single Bipolar Transistors BDW53C-S-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 4A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 100V 4A 2W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BDW53C-S - 769944-BDW53C-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BDW53C-S
769944-BDW53C-S
TRANSISTORS - Transistors (BJT) - Single - BDW53C-S 769944-BDW53C-S
Manufacturer: Bourns Inc. Win Source Part Number: 769944-BDW53C-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 2W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: BDW53C Categories: Discrete Semiconductor Products Manufacturer Package: TO-220 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 4V @ 40mA, 4A Current - Collector Cutoff (Maximum): 500μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): 2SD1892; TIP122; TIP121; Introduction Date: May 23, 1993 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 769944-BDW53C-S
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 2W
Transistor Type: NPN - Darlington
Part Status: Obsolete(EOL)
Family Name: BDW53C
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 4V @ 40mA, 4A
Current - Collector Cutoff (Maximum): 500μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): 2SD1892; TIP122; TIP121;
Introduction Date: May 23, 1993
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BDW53C-S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BDW53C-S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BDW53C-S
TRANS NPN DARL 100V 4A TO220

TRANS NPN DARL 100V 4A TO220

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number BDW53C-S-ND 769944-BDW53C-S BDW53C-S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BDW53C-S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
IC(max) 0.5000 milliamps 4000 milliamps
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