Bourns, Inc. Single Bipolar Transistors BDV65A-S

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 12A 3.5W Through Hole SOT-93
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 80V 12A 3.5W Through Hole SOT-93
Request a Quote Datasheet

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Single Bipolar Transistors - BDV65A-S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BDV65A-S-ND
Single Bipolar Transistors BDV65A-S-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 12A 3.5W Through Hole SOT-93

Bipolar (BJT) Transistor NPN - Darlington 80V 12A 3.5W Through Hole SOT-93

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BDV65A-S - 769941-BDV65A-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BDV65A-S
769941-BDV65A-S
TRANSISTORS - Transistors (BJT) - Single - BDV65A-S 769941-BDV65A-S
Manufacturer: Bourns Inc. Win Source Part Number: 769941-BDV65A-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-218-3 Power - Max: 3.5W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: BDV65A Categories: Discrete Semiconductor Products Manufacturer Package: SOT-93 Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 2V @ 20mA, 5A Current - Collector Cutoff (Maximum): 2mA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V Alternative Parts (Cross-Reference): BDV65B; TIP141; TIP141_NL; Introduction Date: May 23, 1993 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 769941-BDV65A-S
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-218-3
Power - Max: 3.5W
Transistor Type: NPN - Darlington
Part Status: Obsolete(EOL)
Family Name: BDV65A
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-93
Current - Collector (Ic) (Maximum): 12A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2V @ 20mA, 5A
Current - Collector Cutoff (Maximum): 2mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 1000 @ 5A, 4V
Alternative Parts (Cross-Reference): BDV65B; TIP141; TIP141_NL;
Introduction Date: May 23, 1993
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BDV65A-S - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BDV65A-S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BDV65A-S
TRANS NPN DARL 80V 12A SOT93

TRANS NPN DARL 80V 12A SOT93

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number BDV65A-S-ND 769941-BDV65A-S BDV65A-S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BDV65A-S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-218-3 SOT3
IC(max) 2 milliamps 12000 milliamps
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