Bourns, Inc. TRANSISTORS - Transistors (BJT) - Single - BDT60C BDT60C

Manufacturer: Bourns Inc.
Win Source Part Number: 201018-BDT60C
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 2.5V @ 6mA, 1.5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 1.5A, 3V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

TRANS PNP DARL 120V 4A Product overview: BDT60C from Bourns, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BDT60C can be used for catalog matching and distributor lookup.