Bourns, Inc. Single Bipolar Transistors BD897-S

Description
Bipolar (BJT) Transistor NPN - Darlington 60V 8A 2W Through Hole TO-220
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 60V 8A 2W Through Hole TO-220
Request a Quote Datasheet

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Single Bipolar Transistors - BD897-S-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD897-S-ND
Single Bipolar Transistors BD897-S-ND
Bipolar (BJT) Transistor NPN - Darlington 60V 8A 2W Through Hole TO-220

Bipolar (BJT) Transistor NPN - Darlington 60V 8A 2W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BD897-S - 769926-BD897-S - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD897-S
769926-BD897-S
TRANSISTORS - Transistors (BJT) - Single - BD897-S 769926-BD897-S
Manufacturer: Bourns Inc. Win Source Part Number: 769926-BD897-S Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-220-3 Power - Max: 2W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: BD897 Categories: Discrete Semiconductor Products Manufacturer Package: TO-220 Current - Collector (Ic) (Maximum): 8A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 12mA, 3A Current - Collector Cutoff (Maximum): 500μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 3A, 3V Alternative Parts (Cross-Reference): BD645; BDX33A; TIP100; 2SD1827-E; Introduction Date: May 23, 1993 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 769926-BD897-S
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-220-3
Power - Max: 2W
Transistor Type: NPN - Darlington
Part Status: Obsolete(EOL)
Family Name: BD897
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220
Current - Collector (Ic) (Maximum): 8A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 12mA, 3A
Current - Collector Cutoff (Maximum): 500μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 3A, 3V
Alternative Parts (Cross-Reference): BD645; BDX33A; TIP100; 2SD1827-E;
Introduction Date: May 23, 1993
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD897-S - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD897-S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD897-S
TRANS NPN DARL 60V 8A TO220

TRANS NPN DARL 60V 8A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number BD897-S-ND 769926-BD897-S BD897-S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BD897-S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; TO-220-3 TO-220; SOT3
IC(max) 0.5000 milliamps 8000 milliamps
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