Bourns, Inc. TRANSISTORS - Transistors (BJT) - Single - BD648 BD648

Description
Manufacturer: Bourns Inc. Win Source Part Number: 200990-BD648 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 50mA, 5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 3A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Bourns Inc. Win Source Part Number: 200990-BD648 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 50mA, 5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 3A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - BD648 - 200990-BD648 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BD648
200990-BD648
TRANSISTORS - Transistors (BJT) - Single - BD648 200990-BD648
Manufacturer: Bourns Inc. Win Source Part Number: 200990-BD648 Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220 Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 2.5V @ 50mA, 5A Collector Cut-off Current(Max): 500μA Typical Gain (hFE) (Min): 750 @ 3A, 3V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Bourns Inc.
Win Source Part Number: 200990-BD648
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 2.5V @ 50mA, 5A
Collector Cut-off Current(Max): 500μA
Typical Gain (hFE) (Min): 750 @ 3A, 3V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 200990-BD648
Product Name TRANSISTORS - Transistors (BJT) - Single - BD648
Polarity PNP; PNP - Darlington
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFETs - SuperFAP-E3 Model: FMV10N80E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
Transistor Type Power-MOSFET
Package Type TO-220F(SLS)
Transistor Grade / Operating Range Commercial; Industrial; Automotive
View Details
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details