Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules Rclamp3311P-N

Description
10A 8V 3.8V Bidirectional 3.3V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS
Description
10A 8V 3.8V Bidirectional 3.3V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - Rclamp3311P-N - ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
Rclamp3311P-N
Semiconductor Power Modules Rclamp3311P-N
10A 8V 3.8V Bidirectional 3.3V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

10A 8V 3.8V Bidirectional 3.3V DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number Rclamp3311P-N
Product Name Semiconductor Power Modules
Technology Rectifier
Unlock Full Specs
to access all available technical data

Similar Products

 - IM393M6E2XKLA1 - Rochester Electronics
Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
View Details
IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI450VH-120F-50 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M276
Output Voltage 1200 volts
View Details
600V Field Stop IGBT - IGBT-FIELDSTOP-600V - Microchip Technology, Inc.
Specs
Technology IGBT
View Details
flow PACK 1 H6.5 Power Module - 10-PY07HVA075RG-L985F88Y - Vincotech GmbH
Specs
Technology IGBT; IGBT fast
Configuration H6.5
Output Voltage 650 volts
View Details