Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BNCS0806S

Description
DFN-10L ESD and Surge Protection (TVS/ESD) ROHS
Description
DFN-10L ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BNCS0806S - ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BNCS0806S
Semiconductor Power Modules BNCS0806S
DFN-10L ESD and Surge Protection (TVS/ESD) ROHS

DFN-10L ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BNCS0806S
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI450VJ-120-80 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M260
Output Voltage 1200 volts
View Details
Intelligent Power Modules (IPM) - IM818-MCC - Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x23D
View Details
flow PACK E1 Power Module - 10-EZ126PA035RA-L859F88T - Vincotech GmbH
Specs
Technology IGBT; IGBT RGA
Configuration Six-Pack
Output Voltage 1200 volts
View Details
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CD3AG-Module - Microchip Technology, Inc.
Specs
Technology MOSFET; SiC
Output Voltage 1200 volts
Output Current 394 amps
View Details