Born Semiconductor (Shenzhen) Co., Ltd. Semiconductor Power Modules BDFN2C3R31V

Description
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - BDFN2C3R31V - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - BDFN2C3R31V - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
BDFN2C3R31V
Semiconductor Power Modules BDFN2C3R31V
DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

DFN1006 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number BDFN2C3R31V
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

Power Driver Modules - IM393X6EXKLA1 - ODG (Origin Data Global)
Infineon Technologies AG
Power Driver Modules
IM393X6EXKLA1
Specs
Technology IGBT; IGBT
View Details
IGBT Modules 1-Pack - 6th-Gen V Series Model 1MBI3600VD-120P - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules 1-Pack
6th-Gen V Series Model 1MBI3600VD-120P
Specs
Technology IGBT
Package M152
Output Voltage 1200 volts
View Details
flow PACK E2 Power Module - 10-EY076PA075I7-L193F08T - Vincotech GmbH
Vincotech GmbH
flow PACK E2 Power Module
10-EY076PA075I7-L193F08T
Specs
Technology IGBT; IGBT7
Configuration Six-Pack
Output Voltage 650 volts
View Details
IGBT Modules - - Semikron, Inc.
Semikron, Inc.
IGBT Modules
Specs
Technology IGBT
Configuration Half-Bridge; H-Bridge; Six-Pack
Output Voltage 600 to 3300 volts
View Details