NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH4,115 PUMH4,115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - PUMH4,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH4,115 - 097144-PUMH4,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH4,115
097144-PUMH4,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH4,115 097144-PUMH4,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 097144-PUMH4,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSSOP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 200 @ 1mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Application Field: Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 097144-PUMH4,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 200 @ 1mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 568-PUMH4,115TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
568-PUMH4,115TR-ND
Bipolar Transistor Arrays, Pre-Biased 568-PUMH4,115TR-ND
TRANS 2NPN PREBIAS 0.3W 6TSSOP

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey
Product Category Bipolar RF Transistors Transistors Transistors
Product Number PUMH4,115 097144-PUMH4,115 568-PUMH4,115TR-ND
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PUMH4,115 Bipolar Transistor Arrays, Pre-Biased
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
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