NXP Semiconductors PUMB9,125

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon
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Datasheet
Datasheet Summary
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PUMB9 is a PNP/PNP resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ, designed for low current peripheral driving and IC input control. It is housed in a SOT363 (SC-88) surface-mount package measuring 2.2 mm × 1.35 mm × 1.1 mm. Each transistor supports a maximum collector current of −100 mA and a collector-emitter voltage of −50 V. The device operates with a maximum junction temperature of 150 °C and dissipates up to 200 mW per transistor or 300 mW per device. It is qualified to AEC-Q101 for automotive applications. Reflow soldering is the only recommended soldering method.

Datasheet Summary
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PUMB9 is a PNP/PNP resistor-equipped transistor with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ, designed for low current peripheral driving and IC input control. It is housed in a SOT363 (SC-88) surface-mount package measuring 2.2 mm × 1.35 mm × 1.1 mm. Each transistor supports a maximum collector current of −100 mA and a collector-emitter voltage of −50 V. The device operates with a maximum junction temperature of 150 °C and dissipates up to 200 mW per transistor or 300 mW per device. It is qualified to AEC-Q101 for automotive applications. Reflow soldering is the only recommended soldering method.

Suppliers

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Product
Description
Supplier Links
 - PUMB9,125 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number PUMB9,125
Polarity PNP
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