NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R0-30YLE,115 PSMN2R0-30YLE,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 138469-PSMN2R0-30YLE ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 272W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.15V @ 1mA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 5217pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 138469-PSMN2R0-30YLE ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 272W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.15V @ 1mA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 5217pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R0-30YLE,115 - 138469-PSMN2R0-30YLE,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R0-30YLE,115
138469-PSMN2R0-30YLE,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R0-30YLE,115 138469-PSMN2R0-30YLE,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 138469-PSMN2R0-30YLE ,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 272W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.15V @ 1mA Max Gate Charge: 87nC @ 10V Max Input Capacitance: 5217pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 138469-PSMN2R0-30YLE,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 272W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.15V @ 1mA
Max Gate Charge: 87nC @ 10V
Max Input Capacitance: 5217pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 138469-PSMN2R0-30YLE,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN2R0-30YLE,115
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 272000 milliwatts
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