NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN057-200P PSMN057-200P

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 042230-PSMN057-200P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 39A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 3750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 57 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): FDP52N20; STP75NF20; PSMN057-200P,127;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

MOSFET N-CH 200V 39A TO220AB Product overview: PSMN057-200P from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 39A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-PSMN057-200P can be used for catalog matching and distributor lookup.