NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN011-80YS PSMN011-80YS

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 092275-PSMN011-80YS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 117W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 092275-PSMN011-80YS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 117W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN011-80YS - 092275-PSMN011-80YS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN011-80YS
092275-PSMN011-80YS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN011-80YS 092275-PSMN011-80YS
Manufacturer: Nexperia USA Inc. Win Source Part Number: 092275-PSMN011-80YS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 117W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: LFPAK56, Power-SO8 Dimension: SC-100, SOT-669 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 092275-PSMN011-80YS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 117W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: LFPAK56, Power-SO8
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2800pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092275-PSMN011-80YS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PSMN011-80YS
Polarity N-Channel; N-Channel
V(BR)DSS 80 volts
PD 117000 milliwatts
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