NXP Semiconductors PQMH9147

Description
NPN/PNP resistor-equipped transistors
Request a Quote
Description
NPN/PNP resistor-equipped transistors
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN/NPN resistor-equipped transistors with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ in a leadless DFN1010B-6 (SOT1216) package, measuring 1.1 mm × 1 mm × 0.37 mm, offering 100 mA output current per transistor and 350 mW total power dissipation at 25 °C ambient temperature, with AEC-Q101 qualification for automotive applications.

Datasheet Summary
Powered by GS/AI

NPN/NPN resistor-equipped transistors with built-in bias resistors R1 = 10 kΩ and R2 = 47 kΩ in a leadless DFN1010B-6 (SOT1216) package, measuring 1.1 mm × 1 mm × 0.37 mm, offering 100 mA output current per transistor and 350 mW total power dissipation at 25 °C ambient temperature, with AEC-Q101 qualification for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
 - PQMH9147 - Rochester Electronics
Newburyport, MA, United States
NPN/PNP resistor-equipped transistors

NPN/PNP resistor-equipped transistors

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number PQMH9147
Polarity NPN; PNP
Unlock Full Specs
to access all available technical data