NXP Semiconductors 30V 5A MOSFET Transistor PMWD30UN,518

MOSFET 2N-CH 30V 5A 8TSSOP Product overview: PMWD30UN,518 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-PMWD30UN,518 can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 5A 2.3W Surface Mount 8-TSSOP

Win Source Part Number: 1346361-PMWD30UN,518
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Series: TrenchMOS™
Package: Tape & Reel (TR) Cut Tape (CT)
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.3W
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: NXP USA Inc.
Base Product Number: PMWD30
Product Status: Obsolete
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 33mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V