NXP Semiconductors 30V 1.1A MOSFET Transistor PMV185XN,215

MOSFET N-CH 30V 1.1A TO236AB Product overview: PMV185XN,215 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-PMV185XN,215 can be used for catalog matching and distributor lookup.

N-Channel 30V 1.1A (Ta) 325mW (Ta), 1.275W (Tc) Surface Mount SOT-23 (TO-236AB)

PMV185XN - Small Signal Field-Effect Transistor, TO-236AB

Manufacturer: NXP
Win Source Part Number: 1089776-PMV185XN,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 325mW (Ta), 1.275W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 1.3nC @ 4.5V
Max Input Capacitance: 76pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 250 mOhm @ 1.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs