NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD280UN,115 PMGD280UN,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099615-PMGD280UN,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 870mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.89nC @ 4.5V Max Input Capacitance: 45pF @ 20V Maximum Rds On at Id,Vgs: 340 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099615-PMGD280UN,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 870mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.89nC @ 4.5V Max Input Capacitance: 45pF @ 20V Maximum Rds On at Id,Vgs: 340 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD280UN,115 - 099615-PMGD280UN,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD280UN,115
099615-PMGD280UN,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD280UN,115 099615-PMGD280UN,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099615-PMGD280UN,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSSOP Maximum Power Dissipation: 400mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 870mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.89nC @ 4.5V Max Input Capacitance: 45pF @ 20V Maximum Rds On at Id,Vgs: 340 mOhm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 099615-PMGD280UN,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSSOP
Maximum Power Dissipation: 400mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 870mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.89nC @ 4.5V
Max Input Capacitance: 45pF @ 20V
Maximum Rds On at Id,Vgs: 340 mOhm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099615-PMGD280UN,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMGD280UN,115
Polarity N-Channel
V(BR)DSS 20 volts
PD 400 milliwatts
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